Mn2Ge2Lu1 is an intermetallic semiconductor compound combining manganese, germanium, and lutetium. This is a research-phase material investigated for potential applications in thermoelectric devices and magnetic semiconductors, where the rare earth lutetium addition aims to modify electronic band structure and thermal transport properties. The material represents an exploratory composition within the broader family of Heusler and half-Heusler intermetallics, which have garnered significant interest for energy conversion and spintronic applications, though this specific ternary compound remains primarily a laboratory-synthesized composition without established high-volume industrial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 124.3 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 41.40 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4110 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data