Mn2 Ge1

semiconductor

· Mn2 Ge1

Mn₂Ge is an intermetallic semiconductor compound combining manganese and germanium in a 2:1 stoichiometric ratio. This material belongs to the family of manganese-germanium compounds, which are of significant research interest for spintronic and thermoelectric applications due to their potential magnetic and electronic properties. Mn₂Ge remains largely in the experimental and research phase, with investigation focused on its potential use in next-generation semiconductor devices where magnetic order and electronic band structure can be engineered for spin-dependent transport or energy conversion.

spintronics researchthermoelectric devicesmagnetic semiconductorsquantum materials explorationthin-film electronicsexperimental semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	183.6	GPa	—
Shear Modulus(G)	18.34	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03090	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Ge1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control