Mn2Ga2Ge2 is a ternary intermetallic semiconductor compound combining manganese, gallium, and germanium elements. This material belongs to the family of magnetic semiconductors and is primarily of research interest for spintronics and magnetoelectronic applications, where the interplay between magnetic properties and electronic transport is exploited. While not yet widely deployed in mainstream commercial products, materials in this class show promise for next-generation magnetic sensors, spin-based memory devices, and magnetoresistive applications where traditional semiconductors fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 109.8 | GPa | — | ||
Shear Modulus(G) | 56.54 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01540 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05200 | eV/atom | — |