Mn2Bi2S4Br2 is a mixed-halide chalcogenide semiconductor compound combining manganese, bismuth, sulfur, and bromine in a layered crystal structure. This is primarily a research-phase material being explored for its electronic and optoelectronic properties, with potential applications in photovoltaics, photodetectors, and solid-state electronics where the tunable bandgap and mixed-anion composition offer advantages over simpler binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1788 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3280 | eV/atom | — |