Mn2 Bi2 As2 O10

semiconductor

· Mn2 Bi2 As2 O10

Mn2Bi2As2O10 is a complex mixed-metal oxide semiconductor containing manganese, bismuth, and arsenic in a layered or framework structure. This is a research-phase compound that belongs to the family of multivalent transition metal oxides; such materials are investigated primarily for their potential in optoelectronic and magnetoelectric applications where the combination of magnetic (Mn) and heavy post-transition (Bi, As) elements can produce unusual electronic or magnetic behavior. The material remains largely experimental and is not yet established in mainstream industrial production, making it most relevant to materials scientists and advanced device researchers exploring next-generation semiconductors with tunable band structures or multiferroic properties.

research semiconductorsoptoelectronic devicesmagnetoelectric materialsthin-film applicationssolid-state physics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.423	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Bi2 As2 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control