Mn₂B₂O₆ is an inorganic oxide ceramic compound combining manganese and boron oxides, belonging to the family of mixed-metal borate semiconductors. This material is primarily of research and development interest rather than established in high-volume production, with potential applications leveraging its semiconducting behavior in electronic and photonic devices where manganese-based oxides offer cost advantages and varied oxidation states. Its utility would be evaluated against conventional oxide semiconductors in niche applications requiring specific bandgap engineering or magnetoelectric coupling.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8379 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.146 | eV/atom | — |