Mn₂Al₂Ge₂ is an intermetallic semiconductor compound combining manganese, aluminum, and germanium in a stoichiometric ratio. This material belongs to the family of ternary intermetallics and is primarily of research interest for potential applications in thermoelectric devices and magnetoelectronic systems, where the combination of semiconducting behavior with magnetic properties may offer advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 112.1 | GPa | — | ||
Shear Modulus(G) | 63.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1760 | eV/atom | — |