Mn₂Ag₂O₆ is a mixed-valence oxide semiconductor containing manganese and silver cations in an ordered crystalline structure. This compound is primarily of research interest in materials science, investigated for potential applications in catalysis, electrochemistry, and functional ceramics where the combined redox activity of Mn and Ag ions offers tunable electronic and ionic transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.179 | eV/atom | — |