Mn₁₁Zn₁O₁₆ is a mixed-metal oxide semiconductor belonging to the spinel and complex oxide family, combining manganese and zinc in a layered crystalline structure. This material is primarily investigated for electronic and magnetic applications, particularly in varistor devices, gas sensors, and magnetic materials research, where the Mn-Zn composition offers tunable electrical conductivity and ferrimagnetic properties. The specific stoichiometry represents a research-phase compound; Mn-Zn oxides are industrially established in surge protection and sensor applications, and this particular ratio is of interest for optimizing performance in high-frequency electromagnetic or catalytic contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.573 | eV/atom | — |