Mn₁Si₁Ru₂ is an intermetallic semiconductor compound combining manganese, silicon, and ruthenium elements. This material belongs to the family of transition-metal silicides and represents an experimental composition of potential interest in thermoelectric and electronic device research. As a research-phase compound, it warrants investigation for applications requiring semiconductor behavior combined with the unique properties of ruthenium-bearing intermetallics, though industrial adoption remains limited pending further characterization and scalability demonstration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 245.4 | GPa | — | ||
Shear Modulus(G) | 123.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3510 | eV/atom | — |