Mn1 Ni2 Ge1

semiconductor

· Mn1 Ni2 Ge1

Mn₁Ni₂Ge₁ is an intermetallic semiconductor compound belonging to the Heusler alloy family, characterized by an ordered crystal structure combining manganese, nickel, and germanium. This material is primarily of research and development interest for spintronic and thermoelectric applications, where its unique electronic and magnetic properties are being investigated as an alternative to conventional semiconductors. Notable for potential use in magnetic devices and energy conversion systems, Heusler alloys like this composition are explored as high-performance alternatives to traditional silicon-based semiconductors in specialized applications requiring strong spin-dependent transport or enhanced thermoelectric efficiency.

spintronics and magnetic devicesthermoelectric energy conversionresearch semiconductorsHeusler alloy systemsmagnetoresistive sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	160.3	GPa	—
Shear Modulus(G)	43.22	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01020	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1580	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn1 Ni2 Ge1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control