Mn1Nb2S4 is a ternary transition metal sulfide semiconductor combining manganese and niobium with sulfur, belonging to the layered chalcogenide family. This is primarily a research material under investigation for next-generation electronic and photonic devices; it exhibits the structural characteristics typical of 2D layered semiconductors that offer tunable band gaps and potential for thin-film device applications. The combination of manganese and niobium dopants in a sulfide matrix is of interest for photocatalysis, battery electrode materials, and van der Waals heterostructure engineering where such compounds can be exfoliated or integrated into device stacks.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.36 | GPa | — | ||
Shear Modulus(G) | 18.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01210 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5990 | eV/atom | — |