Mn1In1Rh2 is an intermetallic compound semiconductor composed of manganese, indium, and rhodium in a 1:1:2 stoichiometric ratio. This is a research-phase material studied for potential applications in thermoelectric devices and advanced electronic components, where the unique electronic structure of ternary intermetallics can enable tailored band gaps and carrier transport properties. Compounds in this family are of interest to researchers exploring alternatives to conventional semiconductors for specialized applications requiring high thermal stability or unusual electronic characteristics, though industrial adoption remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 163.8 | GPa | — | ||
Shear Modulus(G) | 70.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2590 | eV/atom | — |