MnInF₃ is a ternary fluoride semiconductor compound combining manganese, indium, and fluorine. This material belongs to the perovskite or perovskite-related fluoride family and is primarily of research and exploratory interest rather than established commercial production. Its potential applications center on optoelectronic and photonic devices where fluoride semiconductors offer wide bandgaps, low phonon energies, and radiation hardness—making it candidates for UV/visible emitters, scintillators, and radiation-resistant electronics in harsh environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.77 | GPa | — | ||
Shear Modulus(G) | 19.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1562 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.175 | eV/atom | — |