MnCdO₃ is an experimental ternary oxide semiconductor compound combining manganese and cadmium with oxygen. This material belongs to the broader class of mixed-metal oxides being investigated for potential optoelectronic and photocatalytic applications, where the combination of transition metal elements can yield tunable electronic properties not available in binary oxides. Research into materials of this composition focuses on fundamental device physics rather than established industrial production, making it primarily relevant to materials scientists and device researchers exploring novel semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 187.7 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 32.38 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.369 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data