Mn1 As2 O6

semiconductor

· Mn1 As2 O6

Mn₁As₂O₆ is a ternary oxide semiconductor compound containing manganese and arsenic, likely belonging to the pyroarsenate or mixed-valence oxide family. This is a research-phase material with limited commercial deployment; it is primarily investigated for its potential in optoelectronic and photovoltaic applications due to the band-gap characteristics typical of manganese-arsenic oxide systems. The compound's structural rigidity and semiconductor behavior make it a candidate for exploring novel magnetic semiconductors and photocatalytic materials, though practical device integration remains largely in the experimental stage.

experimental optoelectronicsphotocatalysis researchmagnetic semiconductor devicesthin-film optics developmentmaterials science characterizationenergy conversion studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	156.1	GPa	—
Shear Modulus(G)	73.77	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1496	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.348	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn1 As2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control