Mn₁As₁Pd₂ is an intermetallic semiconductor compound combining manganese, arsenic, and palladium elements. This material belongs to the family of ternary intermetallics and is primarily studied in research contexts for potential applications in spintronics, thermoelectric devices, and magnetic semiconductors where the combination of transition metals can produce useful electronic and magnetic properties. The compound's notable characteristic is the interplay between magnetic (Mn) and noble metal (Pd) constituents, making it relevant for researchers exploring next-generation semiconductor materials with tunable electronic and spin-dependent transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 126.8 | GPa | — | ||
Shear Modulus(G) | 16.94 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1500 | eV/atom | — |