MnAs is a binary intermetallic semiconductor compound combining manganese and arsenic, belonging to the III-V semiconductor family. It exhibits ferromagnetic properties and has been investigated primarily for spintronic applications, magnetic sensors, and research into magnetotransport phenomena rather than high-volume commercial use. Engineers consider MnAs in specialized contexts where magnetic semiconductivity and spin-dependent transport are design requirements, though the material remains largely in the research and development phase with limited industrial adoption compared to mainstream semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02790 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2440 | eV/atom | — |