Mn1.95GdIn1.05S5

semiconductor

· Mn1.95GdIn1.05S5

Mn1.95GdIn1.05S5 is a quaternary sulfide semiconductor compound combining manganese, gadolinium, indium, and sulfur in a layered or complex crystal structure. This is a research-phase material exploring rare-earth doped semiconductors for optoelectronic and photonic applications, particularly relevant to the emerging field of wide-bandgap and mid-infrared responsive materials. The gadolinium dopant introduces magnetic and luminescent properties not found in simpler binary sulfides, making this compound of interest for coupling semiconductor functionality with magnetic or rare-earth-based photon emission.

photonic research materialsrare-earth doped semiconductorsmid-infrared optoelectronicsmagnetic semiconductor researchluminescent device developmentexperimental thin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.660	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn1.95GdIn1.05S5

Electrical Properties

Regulatory Screening

Environmental

Export Control