Mn0.05Te1Pb0.95

semiconductor

· Mn0.05Te1Pb0.95

Mn0.05Te1Pb0.95 is a narrow-bandgap semiconductor alloy based on lead telluride (PbTe) with manganese doping, belonging to the IV-VI semiconductor family. This is primarily a research-stage material studied for thermoelectric and infrared detector applications, where the manganese substitution is engineered to modify electronic band structure and carrier dynamics relative to undoped PbTe. Lead telluride compounds are well-established in mid-infrared sensing and high-temperature thermoelectric power generation; manganese doping in particular is explored to enhance figure-of-merit (ZT) or tune optical/electronic properties for specialized optoelectronic devices.

thermoelectric power generationinfrared detectorsmid-IR opticsresearch semiconductorsdoped lead telluride systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3700	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn0.05Te1Pb0.95

Electrical Properties

Regulatory Screening

Environmental

Export Control