MgTeO₂S is a mixed anionic semiconductor compound combining magnesium with tellurite and sulfide constituents, belonging to the family of multinary metal chalcogenides. This material is primarily of research and developmental interest for optoelectronic and photonic applications, particularly where tunable bandgap, nonlinear optical properties, or specialized light-matter interactions are needed. Its potential lies in next-generation infrared optics, photocatalysis, and solid-state device applications where the combined tellurium and sulfur coordination offers advantages over conventional binary semiconductors in terms of compositional flexibility and engineered electronic structure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — | ||
Magnetic Moment(μB) | 0.0000673 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.060 | eV/atom | — |