MgTaO2N

semiconductor

· MgTaO2N

MgTaO2N is an oxynitride semiconductor compound combining magnesium, tantalum, oxygen, and nitrogen. It is a research-phase material being investigated for photocatalytic and optoelectronic applications, particularly because oxynitride semiconductors can tune their bandgap to absorb visible light, making them candidates for solar energy conversion and environmental remediation where traditional oxides fall short. This material family is notable for potentially enabling more efficient photocatalysts and photoelectrochemical devices compared to conventional oxide semiconductors, though it remains primarily in academic development rather than established industrial production.

photocatalytic water splittingvisible-light photocatalysissolar energy conversionenvironmental remediation (water/air treatment)research semiconductorsnext-generation optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—
Magnetic Moment(μB)	-0.0000637	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control