MgSnOFN

semiconductor

· MgSnOFN

MgSnOFN is an experimental oxynitride semiconductor compound combining magnesium, tin, oxygen, and nitrogen elements. This material belongs to the broader family of mixed-anion semiconductors being investigated for optoelectronic and photocatalytic applications where tunable bandgap and enhanced light absorption are desired. As a research-stage compound, it represents efforts to engineer wide-bandgap semiconductors with improved functional properties compared to conventional binary oxides or nitrides.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devices (research phase)thin-film semiconductorsenergy conversion materialsenvironmental remediation (development stage)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	-3.632e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgSnOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control