MgSnO3 is an ternary oxide semiconductor compound combining magnesium and tin oxides, belonging to the class of mixed-metal oxides with perovskite-like structural characteristics. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in optoelectronic devices, photocatalysis, and next-generation semiconductor technologies where its bandgap and electronic properties could offer advantages over simpler binary oxides. Engineers considering this material should recognize it as an emerging compound suitable for exploratory projects in photovoltaics, environmental remediation, or solid-state electronics where the combination of magnesium and tin provides synergistic benefits unavailable from conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 160.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 76.36 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.477 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.143 | eV | — | ||
| ↳ | 2.500 | eV | — | ||
| ↳ | 2.793 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 6.069 | - | — | ||
Magnetic Moment(μB)2 entries | 0.00000477 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -88.59 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00910 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.725 | eV/atom | — | ||
| ↳ | 0.3200 | eV/atom | — | ||
| ↳ | -2.282 | eV/atom | — |