MgSnO2S — Properties & Data | MatWorld

MgSnO2S

semiconductor

· MgSnO2S

MgSnO₂S is a ternary semiconductor compound combining magnesium, tin, oxygen, and sulfur—a research-phase material belonging to the mixed-anion oxide-sulfide semiconductor family. This composition is being explored for optoelectronic and photocatalytic applications where tunable bandgap and mixed-anion chemistry offer advantages over conventional binary semiconductors; it remains largely in development rather than widespread industrial production, making it relevant for researchers investigating next-generation materials for energy conversion and environmental remediation rather than established commercial applications.

photocatalysis researchoptoelectronic devices (experimental)visible-light catalystssolar energy conversionwater splitting applicationsthin-film semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.0000575	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgSnO2S

Electrical Properties

Other Properties

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