MgSiO2S
semiconductorMgSiO₂S is an experimental magnesium silicate sulfide compound that belongs to the family of mixed-anion semiconductors combining silicate and sulfide chemistry. This material is primarily of research interest for photovoltaic and optoelectronic applications, where the combination of magnesium, silicon, oxygen, and sulfur offers tunable bandgap and potential for absorber layers or window materials in thin-film solar devices and photodetectors. The material remains largely in the development stage, with potential advantages over conventional semiconductors including earth-abundant constituent elements and the ability to engineer optical properties through compositional variation, though practical device integration and long-term stability require further investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |