MgNbO2N

semiconductor

· MgNbO2N

MgNbO₂N is an oxynitride ceramic compound combining magnesium, niobium, oxygen, and nitrogen—a mixed-anion ceramic from the broader family of transition metal oxynitrides. This material is primarily of research and developmental interest rather than an established industrial commodity; it is being investigated for photocatalytic and semiconducting applications where its bandgap and electronic structure offer potential advantages over conventional oxides or nitrides alone.

photocatalytic water splittingvisible-light photocatalysissemiconductor device researchenvironmental remediation catalyststhin-film electronics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—
Magnetic Moment(μB)	-0.000248	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control