MgGeO3 is an oxide semiconductor compound combining magnesium and germanium, belonging to the family of ternary oxides with potential applications in advanced electronic and photonic devices. This material remains largely in the research phase, where it is being investigated for its semiconductor properties and potential use in high-temperature or specialized optoelectronic applications where the combination of magnesium and germanium oxides offers unique electronic characteristics. Engineers would consider this compound primarily in experimental device development where the band structure and charge-carrier behavior of ternary germanate systems provide advantages over conventional binary oxides or pure semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 175.2 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 101.5 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.812 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.576 | eV | — | ||
| ↳ | 2.900 | eV | — | ||
| ↳ | 3.908 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.41 | - | — | ||
| ↳ | 7.320 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB)2 entries | -0.00000719 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -102.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00160 | eV/atom | — | ||
Formation Energy(ΔHf)4 entries | -1.882 | eV/atom | — | ||
| ↳ | 0.3400 | eV/atom | — | ||
| ↳ | -2.505 | eV/atom | — | ||
| ↳ | -2.326 | eV/atom | — |