MgGeO₂N is an oxynitride ceramic compound combining magnesium, germanium, oxygen, and nitrogen phases. This is a research-stage material studied primarily in academic and specialized ceramic development settings for its potential as a wide-bandgap semiconductor or high-temperature structural ceramic, leveraging the thermal stability and hardness typical of oxynitride systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.9640 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data