MgGeN₂ is an inorganic ceramic compound combining magnesium, germanium, and nitrogen—a ternary nitride material. This is primarily a research-phase compound investigated for wide-bandgap semiconductor and structural ceramic applications, with potential relevance to high-temperature, high-hardness, or optoelectronic device contexts where traditional nitride ceramics (such as GaN or AlN) are deployed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 150.7 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 85.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.304 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 4.200 | eV | — | ||
| ↳ | 2.854 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.967 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5766 | C/m² | — | ||
Seebeck Coefficient(S) | -85.19 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7190 | eV/atom | — |