MgGaO2F

semiconductor

· MgGaO2F

MgGaO₂F is an experimental oxyfluoride semiconductor compound combining magnesium, gallium, oxygen, and fluorine. This material belongs to the broader family of wide-bandgap semiconductors and mixed-anion compounds, which are of significant research interest for next-generation optoelectronic and power electronic devices. While not yet in widespread industrial production, oxyfluorides like MgGaO₂F are being investigated for their potential to enable UV-transparent conductors, high-voltage switching applications, and integrated photonic systems where conventional semiconductors (GaN, GaO₂) reach performance limits.

experimental wide-bandgap semiconductorsUV optoelectronics researchhigh-voltage power devicestransparent conductive oxide developmentnext-generation photonic integration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.000	eV	—
Magnetic Moment(μB)	2.009e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control