MgGaN3 — Properties & Data | MatWorld

MgGaN3

ceramic

· MgGaN3

MgGaN₃ is an experimental ternary nitride ceramic compound combining magnesium, gallium, and nitrogen. This material belongs to the wide-bandgap semiconductor and advanced ceramic family, currently in research and development phases rather than established industrial production. The compound is investigated for potential applications in high-temperature electronics, UV optoelectronics, and power device applications where its thermal stability and wide bandgap could offer advantages over conventional GaN-based systems, though it remains largely in the academic exploration stage.

wide-bandgap semiconductorshigh-temperature electronics researchUV optoelectronic devicespower electronics prototypesadvanced ceramic compoundsemerging nitride materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	3.952	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.020	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental