Mg₄Ta₄Sn₂O₁₆ is a complex oxide semiconductor composed of magnesium, tantalum, tin, and oxygen. This is a research-phase material rather than a commercial compound; it belongs to the family of mixed-metal oxides being explored for functional ceramic and electronic applications. The combination of tantalum and tin oxides with magnesium suggests potential utility in high-temperature semiconducting or photocatalytic systems where thermal stability and electronic properties are balanced.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.040 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.773 | eV/atom | — |