Mg3As2 is an III–V compound semiconductor formed from magnesium and arsenic, belonging to the family of wide-bandgap materials investigated for optoelectronic and high-temperature device applications. While primarily a research material rather than a commercial standard, it is explored for its potential in ultraviolet and visible light emission, as well as in high-power electronics where thermal stability and wide bandgap characteristics offer advantages over conventional semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 53.56 | GPa | — | ||
| ↳ | 55.04 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G)2 entries | 22.71 | GPa | — | ||
| ↳ | 28.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.454 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | — | ||
| ↳ | 1.107 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 28.65 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -248 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02370 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6848 | eV/atom | — |