Mg₂Si₀.₆Ge₀.₄Bi₀.₀₂ is a doped magnesium silicide-germanide ceramic compound designed as a thermoelectric material. This n-type semiconductor belongs to the Zintl phase family and represents an experimental composition optimized for solid-state heat-to-electricity conversion by substituting germanium for silicon and introducing bismuth as a dopant. The material is relevant to engineers developing advanced thermoelectric modules for waste heat recovery, as the compositional tuning strategy targets improved electrical transport and reduced lattice thermal conductivity compared to undoped binary Mg₂Si or Mg₂Ge phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 1.940 | W/(m·K) | — | ||
| ↳ | 1.940 | W/(m·K) | 427°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 729.9 | S/cm | 427°C | ||
Electrical Resistivity(ρe) | 0.0000137 | Ω·m | 427°C | ||
Thermoelectric Power Factor(PF) | 0.00227 | W/(m·K²) | 427°C | ||
Seebeck Coefficient(S) | -176.2 | μV/K | 427°C | ||
Thermoelectric Figure of Merit(zT) | 0.8177 | - | 427°C |