Mg₂Zn₁As₂ is a III-V semiconductor compound combining magnesium and zinc cations with arsenic, belonging to the family of wide-bandgap semiconductors. This material is primarily of research interest for optoelectronic and high-frequency electronic applications, where its semiconductor properties could offer advantages in UV detection, high-temperature electronics, or integrated photonic devices; however, it remains largely experimental with limited commercial deployment compared to more established III-V compounds like GaAs or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.11 | GPa | — | ||
Shear Modulus(G) | 20.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.063 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4370 | eV/atom | — |