Mg₂Ti₄O₁₀ is a mixed-metal oxide semiconductor compound combining magnesium and titanium in an oxidic ceramic matrix. This material belongs to the family of complex oxide semiconductors and remains primarily a research compound rather than a widely commercialized engineering material. Its potential applications span photocatalysis, gas sensing, and electronic ceramics where the combination of earth-abundant, non-toxic elements offers advantages over traditional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 100.3 | GPa | — | ||
Shear Modulus(G) | 43.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.601 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.116 | eV/atom | — |