Mg₂In₄O₈ is an inorganic oxide semiconductor compound combining magnesium and indium oxides, belonging to the ternary metal oxide family. This material is primarily of research interest for transparent electronics, optoelectronic devices, and thin-film applications where wide bandgap semiconductors are needed; it represents an exploratory alternative to more established transparent conducting oxides (TCOs) like indium tin oxide (ITO), potentially offering improved optical transparency or modified electronic properties depending on synthesis and doping methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.509 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.065 | eV/atom | — |