Mg2 Ge4 W2 O12

semiconductor

· Mg2 Ge4 W2 O12

Mg₂Ge₄W₂O₁₂ is a complex ternary oxide semiconductor combining magnesium, germanium, and tungsten in a layered or mixed-valence crystal structure. This is a research-phase material primarily investigated for photocatalytic and optoelectronic applications, as the combination of Ge and W oxides can facilitate charge separation under visible or UV light, while Mg incorporation may influence band gap and structural stability.

photocatalytic water splittingenvironmental remediationoptoelectronic devicesresearch semiconductorsvisible-light catalystsmaterials for energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.850	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.011	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg2 Ge4 W2 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control