Mg₂Ge₂As₄ is a quaternary semiconductor compound belonging to the II-IV-V₂ family of materials, combining magnesium, germanium, and arsenic in a specific stoichiometric ratio. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in optoelectronic and high-frequency electronic devices that require semiconductors with tailored bandgap and transport properties. The compound's position within the magnesium-germanium-arsenic phase space makes it a candidate for exploring new semiconductor functionalities, particularly where conventional III-V or II-VI semiconductors may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 53.86 | GPa | — | ||
Shear Modulus(G) | 27.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4362 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2980 | eV/atom | — |