Mg₂Bi₄O₁₀ is an inorganic oxide semiconductor compound combining magnesium and bismuth oxides, representing a mixed-metal oxide system of primary research interest rather than a mature commercial material. This compound and related bismuth oxide systems are being investigated for optoelectronic and photocatalytic applications due to bismuth's favorable electronic structure for light absorption and charge carrier generation. The material is notable within the family of bismuth-based semiconductors for potential use in visible-light photocatalysis and possible solid-state device applications where layered or complex oxide structures offer advantages over single-component alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 83.46 | GPa | — | ||
Shear Modulus(G) | 44.35 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07740 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.521 | eV/atom | — |