Mg1 V2 O6

semiconductor

· Mg1 V2 O6

Mg₁V₂O₆ is an inorganic oxide semiconductor compound containing magnesium and vanadium. This material belongs to the class of mixed-metal oxides and represents an emerging research compound rather than an established industrial material; it is being investigated for optoelectronic and electrochemical applications where the semiconductor bandgap and ionic/electronic transport properties of vanadium oxide systems are of interest.

experimental semiconductor researchoptical device developmentelectrochemical energy storagevanadium oxide heterostructuresthin-film applicationscatalysis research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	69.07	GPa	—
Shear Modulus(G)	26.36	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.787	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.533	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg1 V2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control