Mg1Mo4O8 is a mixed-metal oxide semiconductor compound combining magnesium and molybdenum. This material belongs to the broader family of molybdenum oxide-based semiconductors, which are primarily investigated in research and emerging applications rather than established high-volume industrial production. The compound is notable for its potential in photocatalysis, electrochemical energy storage, and optoelectronic devices, where the combination of Mg and Mo creates electronic properties distinct from single-component oxides; researchers pursue such mixed-metal oxides as alternatives to conventional semiconductors for applications requiring earth-abundant, cost-effective, or environmentally benign materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 153.4 | GPa | — | ||
Shear Modulus(G) | 76.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00760 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.019 | eV/atom | — |