Mg₁Mn₂N₂ is a ternary nitride semiconductor compound combining magnesium and manganese in a nitrogen-rich matrix. This is primarily a research material being explored for wide-bandgap semiconductor applications, particularly in optoelectronics and power electronics where its nitride chemistry offers potential for high-temperature stability and radiation hardness. While not yet commercially widespread, materials in the Mg-Mn-N family are of interest as alternatives to traditional III-V semiconductors (GaN, InN) for specialized applications requiring earth-abundant constituent elements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.01800 | eV/atom | — |