Mg₁Mn₁O₃ is an oxide semiconductor compound combining magnesium and manganese in a 1:1 stoichiometric ratio, belonging to the broader family of mixed-metal oxides used in electronic and magnetic applications. This material is primarily of research and development interest rather than established industrial production, with potential applications in optoelectronics, magnetic devices, and catalysis where the unique electronic properties arising from the Mg-Mn combination may offer advantages over single-metal oxide alternatives. The compound's semiconducting behavior and mixed-valence character make it a candidate for emerging technologies requiring tailored band gaps or magnetic functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00810 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.867 | eV/atom | — |