Mg₁In₃ is an intermetallic compound belonging to the magnesium-indium system, a rare-earth-adjacent semiconductor material primarily studied in research contexts rather than established industrial production. This compound is of interest in advanced optoelectronics and thermoelectric applications where the combination of magnesium and indium offers potential for tunable band structure and unusual electronic properties. Mg₁In₃ represents an exploratory material within the broader family of III-V and intermetallic semiconductors, with development focused on niche applications in high-frequency devices and energy conversion where conventional semiconductors reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.33 | GPa | — | ||
Shear Modulus(G) | 8.960 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04000 | eV/atom | — |