Mg1 Be2 As2

semiconductor

· Mg1 Be2 As2

Mg1Be2As2 is an experimental III-V semiconductor compound combining magnesium, beryllium, and arsenic in a defined stoichiometric ratio. This material belongs to the broader family of wide-bandgap and ultrawide-bandgap semiconductors, which are of significant research interest for high-temperature, high-power, and high-frequency electronic applications. While not yet commercialized at scale, compounds in this chemical space are investigated for potential use in next-generation optoelectronic and power electronic devices where conventional semiconductors reach their thermal or performance limits.

experimental wide-bandgap semiconductorshigh-temperature electronics researchRF and microwave device developmentUV optoelectronicspower conversion systemsspace and aerospace electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	78.19	GPa	—
Shear Modulus(G)	50.65	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6931	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3810	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg1 Be2 As2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control