Lu1B2 is a rare-earth boride semiconductor compound, part of the family of metal borides that exhibit unique electronic and structural properties. This material is primarily of research and development interest, being investigated for potential applications in high-temperature electronics, optoelectronic devices, and advanced material systems where the combination of semiconducting behavior with ceramic-like mechanical robustness is valuable. Compared to conventional silicon-based semiconductors, rare-earth borides like Lu1B2 offer potential advantages in extreme environments, though practical implementation remains limited as the material is not yet established in mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 183.1 | GPa | — | ||
Shear Modulus(G) | 173.3 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7320 | eV/atom | — |