Lutetium arsenide (LuAs) is a rare-earth compound semiconductor belonging to the III-V semiconductor family, consisting of lutetium (a lanthanide element) combined with arsenic. This material is primarily of research and emerging technology interest rather than established high-volume production, with potential applications in high-performance optoelectronic and quantum devices that exploit the unique electronic properties of rare-earth compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9960 | eV/atom | — |