LaSnO2N

semiconductor

· LaSnO2N

LaSnO2N is an oxynitride semiconductor compound combining lanthanum, tin, oxygen, and nitrogen elements, representing a class of mixed-anion materials designed to engineer bandgap and electronic properties beyond traditional oxides. This is primarily a research material under investigation for photocatalytic and optoelectronic applications, where the nitrogen substitution into the oxide lattice enables tuning of light absorption and charge carrier behavior. LaSnO2N and related oxynitrides are of interest to materials researchers as potential alternatives to conventional semiconductors in energy conversion and environmental remediation, leveraging their unique electronic structure compared to binary oxides or nitrides.

photocatalysiswater splitting/hydrogen generationvisible-light photocatalytic degradationoptoelectronic devicessolar energy conversionresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—
Magnetic Moment(μB)	-0.000576	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control